Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology

Shih Chun Ling, Te Chung Wang, Tsung Shine Ko, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
PublisherOptical Society of America
ISBN (Print)1424411742, 9781424411740
StatePublished - 1 Jan 2007
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
Duration: 26 Aug 200726 Aug 2007

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
CountryKorea, Republic of
CitySeoul
Period26/08/0726/08/07

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