@inproceedings{30871c91c3be4208979db6dfa10b6ca0,
title = "Characteristics of ultraviolet nonpolar InGaN/GaN ligh-temitting diodes using trench epitaxial lateral overgrowth technology",
abstract = "Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodeluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium. Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.",
author = "Ling, {Shih Chun} and Wang, {Te Chung} and Ko, {Tsung Shine} and Tien-chang Lu and Hao-Chung Kuo and Wang, {Shing Chung}",
year = "2007",
month = jan,
day = "1",
language = "English",
isbn = "1424411742",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America",
booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007",
note = "null ; Conference date: 26-08-2007 Through 26-08-2007",
}