Ultrathin La2O3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N2 ambient. There was little interfacial layer growth at the interface of La2O3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of 6 × 10-7 A/cm 2 at 1 V was achieved using a Pt/La2O3/Ge structure by post-deposition annealing at 600°C. This result suggests that ultrathin La2O3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal-oxide-semiconductor field-effect transistor.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|State||Published - 13 Apr 2007|
- Post-deposition annealing