Characteristics of ultrathin lanthanum oxide films on germanium substrate: Comparison with those on silicon substrate

Jaeyeol Song*, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Ultrathin La2O3 films deposited on Ge substrates were characterized. The films were deposited by electron-beam evaporation in an ultrahigh vacuum system and were subjected to post-deposition annealing at various temperatures in N2 ambient. There was little interfacial layer growth at the interface of La2O3/Ge, which was confirmed by transmission electron microscopy and spectroscopic ellipsometry. Electrical measurements revealed that a small capacitance equivalent thickness of 1.48 nm with a leakage current density of 6 × 10-7 A/cm 2 at 1 V was achieved using a Pt/La2O3/Ge structure by post-deposition annealing at 600°C. This result suggests that ultrathin La2O3 films can be grown on a Ge substrate by annealing at a sufficiently high temperature for activating the source and drain regions for a Ge metal-oxide-semiconductor field-effect transistor.

Original languageEnglish
Pages (from-to)L376-L378
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number12-16
DOIs
StatePublished - 13 Apr 2007

Keywords

  • Germanium
  • High-k
  • LaO
  • MOS
  • PDA
  • Post-deposition annealing

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