Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing

Jiann Heng Chen, Tan Fu Lei, Jian Hong Chen, Tien-Sheng Chao

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work.The surface morpholgy of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N2/N2O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+Vg and -Vg).

Original languageEnglish
Pages (from-to)4282-4288
Number of pages7
JournalJournal of the Electrochemical Society
Volume147
Issue number11
DOIs
StatePublished - 1 Nov 2000

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