Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

C. F. Lin*, H. H. Yao, J. W. Lu, Y. L. Hsieh, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3λ InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410nm emission peak and a low thermally induced red-shift effect (0.12nm/kA/cm2) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO 2/SiO2 DBR layers under 600A/cm2 inject current density. The narrow line width of 7.4nm, emission peak localization at 410nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure.

Original languageEnglish
Pages (from-to)359-363
Number of pages5
JournalJournal of Crystal Growth
Volume261
Issue number2-3
DOIs
StatePublished - 19 Jan 2004
EventProceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States
Duration: 20 Jul 200324 Jul 2003

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B2. AlN/GaN
  • B2. Distributed Bragg reflectors
  • B2. GaN
  • B2. InGaN/GaN
  • B3. Resonant-cavity light-emitting diode

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