Characteristics of SOI FET's under pulsed conditions

Keith A. Jenkins*, J. Y.C. Sun, J. Gautier

*Corresponding author for this work

Research output: Contribution to journalArticle

67 Scopus citations

Abstract

A system for measuring output characteristics of FET's using nanosecond pulses, instead of dc voltage and current measurement, is described. The measurement system is used to obtain the I-V characteristics of silicon-on-insulator (SOI) FET's without the degradation resulting from self heating. Use of the technique to study partially depleted SOI FET's with floating bodies shows that under pulsed conditions, their output curves have a history dependence. The physical mechanisms responsible for the history dependence are explained. Further understanding of the physical mechanisms is given by examination of single-shot pulse measurements. The role of transient and time-dependent phenomena in determining I-V curves is elucidated.

Original languageEnglish
Pages (from-to)1923-1930
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume44
Issue number11
DOIs
StatePublished - 1997

Fingerprint Dive into the research topics of 'Characteristics of SOI FET's under pulsed conditions'. Together they form a unique fingerprint.

  • Cite this