Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

Hung Pin D. Yang; I. Chen Hsu; Fang I. Lai; Kuo-Jui Lin; Ru Shang Hsiao; Hao-Chung Kuo; Jim Y. Chi

doi:10.1080/09500340701576288

Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

Hung Pin D. Yang, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Hao-Chung Kuo, Jim Y. Chi

Research output: Contribution to journal › Article › peer-review

Abstract

We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

Original language	English
Pages (from-to)	1013-1021
Number of pages	9
Journal	Journal of Modern Optics
Volume	55
Issue number	6
DOIs	https://doi.org/10.1080/09500340701576288
State	Published - 1 Mar 2008

Keywords

InGaAs
Photonic-crystal
Quantum-dot
Sub-monolayer
VCSEL

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10.1080/09500340701576288

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title = "Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range",

abstract = "We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.",

keywords = "InGaAs, Photonic-crystal, Quantum-dot, Sub-monolayer, VCSEL",

author = "Yang, {Hung Pin D.} and Hsu, {I. Chen} and Lai, {Fang I.} and Kuo-Jui Lin and Hsiao, {Ru Shang} and Hao-Chung Kuo and Chi, {Jim Y.}",

year = "2008",

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TY - JOUR

T1 - Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

AU - Yang, Hung Pin D.

AU - Hsu, I. Chen

AU - Lai, Fang I.

AU - Lin, Kuo-Jui

AU - Hsiao, Ru Shang

AU - Kuo, Hao-Chung

AU - Chi, Jim Y.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

AB - We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

KW - InGaAs

KW - Photonic-crystal

KW - Quantum-dot

KW - Sub-monolayer

KW - VCSEL

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