Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

Hung Pin D. Yang, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Hao-Chung Kuo, Jim Y. Chi

Research output: Contribution to journalArticle

Abstract

We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

Original languageEnglish
Pages (from-to)1013-1021
Number of pages9
JournalJournal of Modern Optics
Volume55
Issue number6
DOIs
StatePublished - 1 Mar 2008

Keywords

  • InGaAs
  • Photonic-crystal
  • Quantum-dot
  • Sub-monolayer
  • VCSEL

Fingerprint Dive into the research topics of 'Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range'. Together they form a unique fingerprint.

  • Cite this