Characteristics of single-chip GaN-based alternating current light-emitting diode

Hsi Hsuan Yen*, Hao-Chung Kuo, Wen Yung Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about 1W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed.

Original languageEnglish
Pages (from-to)8808-8810
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number12
DOIs
StatePublished - 19 Dec 2008

Keywords

  • Alternating current
  • GaN
  • Light-emitting diode
  • Wheatstone bridge

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