CHARACTERISTICS OF SHORT-CHANNEL MOSFETs IN THE BREAKDOWN REGIME.

F. C. Hsu*, R. S. Muller, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations
Original languageEnglish
Pages (from-to)282-285
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1982

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