Characteristics of self-aligned Si/Ge T-gate poly-si thin-film transistors with high on/off current ratio

Po Yi Kuo*, Tien-Sheng Chao, Pei Shan Hsieh, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this paper, we have successfully developed and fabricated self-aligned Si/Ge T-gate poly-Si thin-film transistors (Si/Ge T-gate TFTs) with a thick gate oxide at the gate edges near the source and drain for the first time. The Si/Ge T-gate was formed by selective wet etching of Ge gate layer. The thick gate oxide layer at the gate edges and passivation oxide layer were deposited simultaneously in passivation process. The thick gate oxide at the gate edges effectively reduces the drain vertical and lateral electric fields without additional mask, lightly doped drain, spacer, or subgate bias. The Si/Ge T-gate TFTs not only reduce the off-state leakage current but also maintain a high on-state current. Experimental results show that the Si/Ge T-gate TFTs have low off-state leakage currents, improved on/off current ratio, and more saturated output characteristics compared with conventional TFTs.

Original languageEnglish
Pages (from-to)1171-1176
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume54
Issue number5
DOIs
StatePublished - 1 May 2007

Keywords

  • Germanium
  • On/off current ratio
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)
  • Self-aligned
  • Si/Ge T-gate

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