Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate

Michael Yu*, Horng-Chih Lin, Guo Hua Chen, Tiao Yuan Huang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 107 could be achieved for both n- and p-channel devices. Nevertheless, the performance is significantly degraded by a marked increase of off-state leakage current when the channel length is scaled below 1 μm. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.

Original languageEnglish
Pages (from-to)2815-2820
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number5 A
DOIs
StatePublished - 1 May 2002

Keywords

  • Field-induced drain
  • Leakage
  • Poly-Si
  • Sub-gate
  • Thin-film transistor (TFT)

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