Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 107 could be achieved for both n- and p-channel devices. Nevertheless, the performance is significantly degraded by a marked increase of off-state leakage current when the channel length is scaled below 1 μm. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|State||Published - 1 May 2002|
- Field-induced drain
- Thin-film transistor (TFT)