Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

Huang-Chung Cheng; Ya-Hsiang Tai; Ming Shiann Feng; Jau Jey Wang

doi:10.1117/12.143982

Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

Huang-Chung Cheng^*, Ya-Hsiang Tai, Ming Shiann Feng, Jau Jey Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.

Original language	English
Pages (from-to)	1798-1802
Number of pages	5
Journal	Optical Engineering
Volume	32
Issue number	8
DOIs	https://doi.org/10.1117/12.143982
State	Published - 1 Jan 1993

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title = "Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures",

abstract = "The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.",

author = "Huang-Chung Cheng and Ya-Hsiang Tai and Feng, {Ming Shiann} and Wang, {Jau Jey}",

year = "1993",

month = jan,

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doi = "10.1117/12.143982",

language = "English",

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journal = "Optical Engineering",

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T1 - Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

AU - Cheng, Huang-Chung

AU - Tai, Ya-Hsiang

AU - Feng, Ming Shiann

AU - Wang, Jau Jey

PY - 1993/1/1

Y1 - 1993/1/1

N2 - The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.

AB - The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.

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U2 - 10.1117/12.143982

DO - 10.1117/12.143982

M3 - Article

AN - SCOPUS:0027652360

VL - 32

SP - 1798

EP - 1802

JO - Optical Engineering

JF - Optical Engineering

SN - 0091-3286

IS - 8

ER -