Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

Huang-Chung Cheng*, Ya-Hsiang Tai, Ming Shiann Feng, Jau Jey Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The characteristics of polycrystalline silicon thin-film transistors are analyzed. Display technologies, thermal oxides as gate dielectrics. Polycrystalline silicon thin-film transistor (TFTs) device fabrication is described, and results of research investigations on thermal oxides as gate dielectrics.

Original languageEnglish
Pages (from-to)1798-1802
Number of pages5
JournalOptical Engineering
Volume32
Issue number8
DOIs
StatePublished - 1 Jan 1993

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