Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

Hsiao Yi Lin*, Tan Fu Lei, Horng-Chih Lin, Chun Yen Chang, Ruey Ching Twu, Ray Chern Deng, Jandel Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 1012 cm-2 and 4.9 × 1012 cm-2 were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.

Original languageEnglish
Pages (from-to)2029-2033
Number of pages5
JournalSolid State Electronics
Volume38
Issue number12
DOIs
StatePublished - 1 Jan 1995

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