Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

Hsiao Yi Lin; Tan Fu Lei; Horng-Chih Lin; Chun Yen Chang; Ruey Ching Twu; Ray Chern Deng; Jandel Lin

doi:10.1016/0038-1101(95)00030-W

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

Hsiao Yi Lin^*, Tan Fu Lei, Horng-Chih Lin, Chun Yen Chang, Ruey Ching Twu, Ray Chern Deng, Jandel Lin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article

Abstract

In situ boron-doped polycrystalline Si_1-xGe_x (poly-Si_1-xGe_x) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 10¹² cm^-2 and 4.9 × 10¹² cm^-2 were obtained for poly-Si and poly-Si_0.79Ge_0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.

Original language	English
Pages (from-to)	2029-2033
Number of pages	5
Journal	Solid State Electronics
Volume	38
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(95)00030-W
State	Published - 1 Jan 1995

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Lin, H. Y., Lei, T. F., Lin, H-C., Chang, C. Y., Twu, R. C., Deng, R. C., & Lin, J. (1995). Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system. Solid State Electronics, 38(12), 2029-2033. https://doi.org/10.1016/0038-1101(95)00030-W

@article{3c126a4cbfb24b42b68af0c458723085,

title = "Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system",

abstract = "In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 1012 cm-2 and 4.9 × 1012 cm-2 were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.",

author = "Lin, {Hsiao Yi} and Lei, {Tan Fu} and Horng-Chih Lin and Chang, {Chun Yen} and Twu, {Ruey Ching} and Deng, {Ray Chern} and Jandel Lin",

year = "1995",

month = jan,

day = "1",

doi = "10.1016/0038-1101(95)00030-W",

language = "English",

volume = "38",

pages = "2029--2033",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

AU - Lin, Hsiao Yi

AU - Lei, Tan Fu

AU - Lin, Horng-Chih

AU - Chang, Chun Yen

AU - Twu, Ruey Ching

AU - Deng, Ray Chern

AU - Lin, Jandel

PY - 1995/1/1

Y1 - 1995/1/1

N2 - In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 1012 cm-2 and 4.9 × 1012 cm-2 were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.

AB - In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 × 1012 cm-2 and 4.9 × 1012 cm-2 were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.

UR - http://www.scopus.com/inward/record.url?scp=0029515338&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00030-W

DO - 10.1016/0038-1101(95)00030-W

M3 - Article

AN - SCOPUS:0029515338

VL - 38

SP - 2029

EP - 2033

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 12

ER -