Characteristics of poly-si nanowire transistors with multiple-gate configurations

Hsing H. Hsu*, Horng-Chih Lin, Ko H. Lee, Jian F. Huang, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations
Original languageEnglish
Title of host publication2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages101-102
Number of pages2
DOIs
StatePublished - 14 Aug 2008
Event2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 21 Apr 200823 Apr 2008

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period21/04/0823/04/08

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