Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

Chiao Yun Chang*, Huei Min Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang, Chin Ming Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6x6 k?p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

Original languageEnglish
Title of host publicationReliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II
Number of pages6
StatePublished - 15 Oct 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 9 Apr 201213 Apr 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA

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