Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness

Horng-Chih Lin*, Cheng I. Lin, Zer Ming Lin, Bo Shiuan Shie, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.

Original languageEnglish
Article number6428639
Pages (from-to)1142-1148
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - 5 Feb 2013


  • Fixed charges
  • junctionless (JL) transistors
  • poly-Si
  • short-channel effect
  • thin-film transistor (TFT)

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