Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness

Horng-Chih Lin; Cheng I. Lin; Zer Ming Lin; Bo Shiuan Shie; Tiao Yuan Huang

doi:10.1109/TED.2013.2239647

Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness

Horng-Chih Lin^*, Cheng I. Lin, Zer Ming Lin, Bo Shiuan Shie, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}^-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}^-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.

Original language	English
Article number	6428639
Pages (from-to)	1142-1148
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	3
DOIs	https://doi.org/10.1109/TED.2013.2239647
State	Published - 5 Feb 2013

Keywords

Fixed charges
junctionless (JL) transistors
poly-Si
short-channel effect
thin-film transistor (TFT)

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title = "Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness",

abstract = "N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.",

keywords = "Fixed charges, junctionless (JL) transistors, poly-Si, short-channel effect, thin-film transistor (TFT)",

author = "Horng-Chih Lin and Lin, {Cheng I.} and Lin, {Zer Ming} and Shie, {Bo Shiuan} and Huang, {Tiao Yuan}",

year = "2013",

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doi = "10.1109/TED.2013.2239647",

language = "English",

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pages = "1142--1148",

journal = "Ieee Transactions On Electron Devices",

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publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

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T1 - Characteristics of planar junctionless poly-Si thin-film transistors with various channel thickness

AU - Lin, Horng-Chih

AU - Lin, Cheng I.

AU - Lin, Zer Ming

AU - Shie, Bo Shiuan

AU - Huang, Tiao Yuan

PY - 2013/2/5

Y1 - 2013/2/5

N2 - N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.

AB - N-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From $C$- $V$ characterization, the ionized dopant concentration in the channel is determined to be around 2 \times \hbox{10}^{19} \ \hbox{cm}-3 and the fixed charge density to be around $-6 \times \hbox{10}^{12} \ \hbox{cm}-2. The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.

KW - Fixed charges

KW - junctionless (JL) transistors

KW - poly-Si

KW - short-channel effect

KW - thin-film transistor (TFT)

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