Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches

Po Lem Lin; Shyh Feng Chen; Kaung-Hsiung Wu; Jenh-Yih Juang; Tseng Ming Uen; Yih Shung Gou

doi:10.1143/JJAP.41.L1158

Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches

Po Lem Lin^*, Shyh Feng Chen, Kaung-Hsiung Wu, Jenh-Yih Juang, Tseng Ming Uen, Yih Shung Gou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.

Original language	English
Pages (from-to)	L1158-L1160
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	10 B
DOIs	https://doi.org/10.1143/JJAP.41.L1158
State	Published - 15 Oct 2002

Keywords

Bipolar
Free-space electrooptic sampling
Photoconductive switches
THz radiation
Ultrafast laser pulse illumination

Access to Document

10.1143/JJAP.41.L1158

Fingerprint Dive into the research topics of 'Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches'. Together they form a unique fingerprint.

Cite this

@article{d20472bd1a9d42d7a7003f062acfd616,

title = "Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches",

abstract = "The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.",

keywords = "Bipolar, Free-space electrooptic sampling, Photoconductive switches, THz radiation, Ultrafast laser pulse illumination",

author = "Lin, {Po Lem} and Chen, {Shyh Feng} and Kaung-Hsiung Wu and Jenh-Yih Juang and Uen, {Tseng Ming} and Gou, {Yih Shung}",

year = "2002",

month = oct,

day = "15",

doi = "10.1143/JJAP.41.L1158",

language = "English",

volume = "41",

pages = "L1158--L1160",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10 B",

}

Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches. / Lin, Po Lem; Chen, Shyh Feng; Wu, Kaung-Hsiung; Juang, Jenh-Yih; Uen, Tseng Ming; Gou, Yih Shung.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 10 B, 15.10.2002, p. L1158-L1160.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of photogenerated bipolar terahertz radiation in biased photoconductive switches

AU - Lin, Po Lem

AU - Chen, Shyh Feng

AU - Wu, Kaung-Hsiung

AU - Juang, Jenh-Yih

AU - Uen, Tseng Ming

AU - Gou, Yih Shung

PY - 2002/10/15

Y1 - 2002/10/15

N2 - The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.

AB - The characteristics of the optically induced bipolar terahertz (THz) radiation from biased semi-insulating GaAs photoconductive switches were investigated using a free-space electrooptic sampling technique. The emitted radiation shows a nearly symmetrical waveform with a broad-band frequency spectrum spanning over 0.1-3 THz, which displays essentially no dependence on the optical excitation fluence or strength of biased field. However, it does slightly depend on the emitter gap spacing. The dynamics of the emitted THz transient is in agreement with the optically induced ultrafast charge transport process driven by the biased field.

KW - Bipolar

KW - Free-space electrooptic sampling

KW - Photoconductive switches

KW - THz radiation

KW - Ultrafast laser pulse illumination

UR - http://www.scopus.com/inward/record.url?scp=0037110205&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.L1158

DO - 10.1143/JJAP.41.L1158

M3 - Article

AN - SCOPUS:0037110205

VL - 41

SP - L1158-L1160

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 10 B

ER -