Characteristics of (Pb, Sr)TiO3 films post treated by low temperature technologies

Jyh Liang Wang*, Chueh Kuei Jan, Der Chi Shye, Meng Wei Kuo, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The novel annealing technologies, rapid thermal annealing (RTA) and excimer laser annealing (ELA) at low substrate temperature (300°C), were applied on the (Pb, Sr)TiO3 (PSrT) films. The PSrT film post treated by ELA only exhibits ferroelectric property and lager dielectric constant than as-deposited PSrT film. The PSrT film post treated by RTA only shows poor P-E curve and large leakage current. Interesting, the electrical properties of the PSrT film can be greatly enhanced by both of the ELA and the succeeding RTA treatments, so ferroelectric properties and dielectric constant can be reached as high as 15 μC/cm2 of Ps and 574 of dielectric constant. In this work, excellent electrical properties of PSrT film post treated by both of ELA and succeeding RTA at low substrate temperature were systematically studied.

Original languageEnglish
Pages469-478
Number of pages10
StatePublished - 1 Dec 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 12 Oct 200316 Oct 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period12/10/0316/10/03

Fingerprint Dive into the research topics of 'Characteristics of (Pb, Sr)TiO<sub>3</sub> films post treated by low temperature technologies'. Together they form a unique fingerprint.

Cite this