The novel annealing technologies, rapid thermal annealing (RTA) and excimer laser annealing (ELA) at low substrate temperature (300°C), were applied on the (Pb, Sr)TiO3 (PSrT) films. The PSrT film post treated by ELA only exhibits ferroelectric property and lager dielectric constant than as-deposited PSrT film. The PSrT film post treated by RTA only shows poor P-E curve and large leakage current. Interesting, the electrical properties of the PSrT film can be greatly enhanced by both of the ELA and the succeeding RTA treatments, so ferroelectric properties and dielectric constant can be reached as high as 15 μC/cm2 of Ps and 574 of dielectric constant. In this work, excellent electrical properties of PSrT film post treated by both of ELA and succeeding RTA at low substrate temperature were systematically studied.
|Number of pages||10|
|State||Published - 1 Dec 2003|
|Event||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States|
Duration: 12 Oct 2003 → 16 Oct 2003
|Conference||Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues|
|Period||12/10/03 → 16/10/03|