Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang*, K. C. Shen, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

Original languageEnglish
Pages (from-to)637-643
Number of pages7
JournalChinese Journal of Physics
Volume40
Issue number6
StatePublished - 1 Dec 2002

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