Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications

Hung Pin D. Yang*, Jui Nung Liu, Fang I. Lai, Hao-Chung Kuo, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.

Original languageEnglish
Pages (from-to)2941-2943
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
StatePublished - 8 May 2007


  • Holey
  • Light-emitting diode (LED)
  • P-substrate

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