A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|State||Published - 8 May 2007|
- Light-emitting diode (LED)