Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxide

Hung Der Su*, Bi Shiou Chiou, Shien Yang Wu, Ming Hsung Chang, Kuo Hua Lee, Yung Shun Chen, Chih Ping Chao, Yee Chaung See, Jack Yuan Chen Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The oxide breakdown characteristics of ultrathin oxide (2.2 nm) have been studied in this paper. Light emission microscopy (EMMI) analysis shows that each breakdown has a specific failure location with a random distribution. Gate leakage current increases for all soft breakdown events are similar. After soft breakdown, the I-V curve still shows the representative direct tunneling characteristics and can be fitted using a dual direct tunneling (DDT) model. Soft breakdown has no effect on the drain current of long-channel devices. Breakdown at the polyedge appears to be of the hard-breakdown mode and results in an abrupt increase in gate current. For short-channel devices, the polyedge is always within the damaged region of an oxide because the channel is shorter than the damaged region of the oxide. Hence, only hard breakdown resulting in permanent damage is observed in short-channel devices.

Original languageEnglish
Pages (from-to)5521-5526
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
DOIs
StatePublished - Sep 2003

Keywords

  • Breakdown
  • DDT
  • Reliability
  • TDDB
  • Ultrathin oxide

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