Characteristics of N2O-grown polyoxide by the recrystallized-polysilicon method

Kow-Ming Chang*, Tzyh Cheang Lee, Yong Long Sun

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

This work proposes a new method for growing the polyoxide and investigates its characteristics. Thin amorphous silicon was deposited on the first polysilicon and then recrystallized at 600°C for 24 h to form a new polysilicon. The N2O-grown polyoxide formed by this method has a higher conduction current and better stress endurance than those of the conventional polyoxide. The higher quality polyoxide, as measured by lower gate voltage shift and larger charge-to-breakdown (Qbd), is due to the smooth polyoxide/polysilicon interface which increases the stress endurance under high fields.

Original languageEnglish
Pages (from-to)274-275
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume1
Issue number6
DOIs
StatePublished - 1 Dec 1998

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