Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x = 1 → 0)/ AlyGa1-yAs (y = 0 → 0.3) contact structures

Sheu Shung Chen; Chien-Cheng Lin; Wen Ho Lan; Sun Li Tu; Chin Kun Peng

doi:10.1143/JJAP.36.3443

Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/In_xGa_1-xAs (x = 1 → 0)/ Al_yGa_1-yAs (y = 0 → 0.3) contact structures

Sheu Shung Chen^*, Chien-Cheng Lin, Wen Ho Lan, Sun Li Tu, Chin Kun Peng

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A molecular beam epitaxy InAs/In_xGa_1-xAs (x = 1 → 0)/Al_yGa_1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance r_c of 1.05 × 10^-7 Ω·cm² and an extrinsic transconductance g_me of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency f_t of 22 GHz and a maximum oscillation frequency f_max of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.

Original language	English
Pages (from-to)	3443-3447
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.36.3443
State	Published - 1 Jun 1997

Keywords

Molecular beam epitaxy
Nonalloyed
Ohmic contact
Pseudomorphic high electron mobility transistors
Small-signal equivalent circuit model
Specific contact resistance

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10.1143/JJAP.36.3443

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Chen, S. S., Lin, C-C., Lan, W. H., Tu, S. L., & Peng, C. K. (1997). Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/In_xGa_1-xAs (x = 1 → 0)/ Al_yGa_1-yAs (y = 0 → 0.3) contact structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(6 A), 3443-3447. https://doi.org/10.1143/JJAP.36.3443

Chen, Sheu Shung ; Lin, Chien-Cheng ; Lan, Wen Ho ; Tu, Sun Li ; Peng, Chin Kun. / Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/In_xGa_1-xAs (x = 1 → 0)/ Al_yGa_1-yAs (y = 0 → 0.3) contact structures. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1997 ; Vol. 36, No. 6 A. pp. 3443-3447.

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title = "Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x = 1 → 0)/ AlyGa1-yAs (y = 0 → 0.3) contact structures",

abstract = "A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 → 0)/AlyGa1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance rc of 1.05 × 10-7 Ω·cm2 and an extrinsic transconductance gme of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency ft of 22 GHz and a maximum oscillation frequency fmax of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.",

keywords = "Molecular beam epitaxy, Nonalloyed, Ohmic contact, Pseudomorphic high electron mobility transistors, Small-signal equivalent circuit model, Specific contact resistance",

author = "Chen, {Sheu Shung} and Chien-Cheng Lin and Lan, {Wen Ho} and Tu, {Sun Li} and Peng, {Chin Kun}",

year = "1997",

month = jun,

day = "1",

doi = "10.1143/JJAP.36.3443",

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Chen, SS, Lin, C-C, Lan, WH, Tu, SL & Peng, CK 1997, 'Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/In_xGa_1-xAs (x = 1 → 0)/ Al_yGa_1-yAs (y = 0 → 0.3) contact structures', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 36, no. 6 A, pp. 3443-3447. https://doi.org/10.1143/JJAP.36.3443

Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/In_xGa_1-xAs (x = 1 → 0)/ Al_yGa_1-yAs (y = 0 → 0.3) contact structures. / Chen, Sheu Shung; Lin, Chien-Cheng; Lan, Wen Ho; Tu, Sun Li; Peng, Chin Kun.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 6 A, 01.06.1997, p. 3443-3447.

Research output: Contribution to journal › Article › peer-review

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T1 - Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x = 1 → 0)/ AlyGa1-yAs (y = 0 → 0.3) contact structures

AU - Chen, Sheu Shung

AU - Lin, Chien-Cheng

AU - Lan, Wen Ho

AU - Tu, Sun Li

AU - Peng, Chin Kun

PY - 1997/6/1

Y1 - 1997/6/1

N2 - A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 → 0)/AlyGa1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance rc of 1.05 × 10-7 Ω·cm2 and an extrinsic transconductance gme of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency ft of 22 GHz and a maximum oscillation frequency fmax of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.

AB - A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 → 0)/AlyGa1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance rc of 1.05 × 10-7 Ω·cm2 and an extrinsic transconductance gme of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency ft of 22 GHz and a maximum oscillation frequency fmax of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.

KW - Molecular beam epitaxy

KW - Nonalloyed

KW - Ohmic contact

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KW - Specific contact resistance

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