Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x = 1 → 0)/ AlyGa1-yAs (y = 0 → 0.3) contact structures

Sheu Shung Chen*, Chien-Cheng Lin, Wen Ho Lan, Sun Li Tu, Chin Kun Peng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 → 0)/AlyGa1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance rc of 1.05 × 10-7 Ω·cm2 and an extrinsic transconductance gme of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency ft of 22 GHz and a maximum oscillation frequency fmax of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.

Original languageEnglish
Pages (from-to)3443-3447
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 A
StatePublished - 1 Jun 1997


  • Molecular beam epitaxy
  • Nonalloyed
  • Ohmic contact
  • Pseudomorphic high electron mobility transistors
  • Small-signal equivalent circuit model
  • Specific contact resistance

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