Characteristics of n-type planar junctionless poly-si thin-film transistors

C. I. Lin, Horng-Chih Lin, T. Y. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we study the electrical characteristics of planar poly- Si junctionless (JL) thin-film transistors (TFTs) with 10 nm-thick channel and various gate width. The output current of JL devices is drastically larger than that of the control device with an undoped channel, owing to the abundant carriers contained in the channel of the JL devices which tends to reduce both channel and source/drain series resistances. Subthreshold swing of the JL devices is found to be larger than the control ones, owing to the existence of a depletion layer in the channel. Nonetheless, excellent on/off current ratio (>107) is achieved, thanks to the use of the ultra-thin channel.

Original languageEnglish
Title of host publicationThin Film Transistors 11, TFT 2012
Pages23-28
Number of pages6
Edition8
DOIs
StatePublished - 1 Dec 2012
Event11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012 - Honolulu, HI, United States
Duration: 8 Oct 201210 Oct 2012

Publication series

NameECS Transactions
Number8
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
CountryUnited States
CityHonolulu, HI
Period8/10/1210/10/12

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    Lin, C. I., Lin, H-C., & Huang, T. Y. (2012). Characteristics of n-type planar junctionless poly-si thin-film transistors. In Thin Film Transistors 11, TFT 2012 (8 ed., pp. 23-28). (ECS Transactions; Vol. 50, No. 8). https://doi.org/10.1149/05008.0023ecst