Characteristics of Modified-Schottky-Barrier (MSB) FinFETs

Chia Pin Lin*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

It has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.

Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers
Pages118-119
Number of pages2
DOIs
StatePublished - 31 Oct 2005
Event2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH - Hsinchu, Taiwan
Duration: 25 Apr 200527 Apr 2005

Publication series

Name2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Conference

Conference2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH
CountryTaiwan
CityHsinchu
Period25/04/0527/04/05

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    Lin, C. P., & Tsui, B-Y. (2005). Characteristics of Modified-Schottky-Barrier (MSB) FinFETs. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA - TECH, Proceedings of Technical Papers (pp. 118-119). [T76] (2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers). https://doi.org/10.2514/1.4652