Characteristics of MIS solar cells using sputtering SiO2 insulating layers

Tzu Yueh Chang*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages1318-1321
Number of pages4
DOIs
StatePublished - 20 Dec 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

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