Characteristics of MIS solar cells using sputtering SiO2 insulating layers

Tzu Yueh Chang; Chun Lung Chang; Hsin Yu Lee; Po-Tsung Lee

doi:10.1109/PVSC.2010.5614304

Characteristics of MIS solar cells using sputtering SiO₂ insulating layers

Tzu Yueh Chang^*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO₂ insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO₂ insulating layer and a hydrogen (H ₂2) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO₂ insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO₂ insulating layer is a good alternative insulating layer for MIS solar cells.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1318-1321
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5614304
State	Published - 20 Dec 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

Access to Document

10.1109/PVSC.2010.5614304

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Cite this

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title = "Characteristics of MIS solar cells using sputtering SiO2 insulating layers",

abstract = "In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.",

author = "Chang, {Tzu Yueh} and Chang, {Chun Lung} and Lee, {Hsin Yu} and Po-Tsung Lee",

year = "2010",

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doi = "10.1109/PVSC.2010.5614304",

language = "English",

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Chang, TY, Chang, CL, Lee, HY & Lee, P-T 2010, Characteristics of MIS solar cells using sputtering SiO₂ insulating layers. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614304, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1318-1321, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5614304

Characteristics of MIS solar cells using sputtering SiO₂ insulating layers. / Chang, Tzu Yueh; Chang, Chun Lung; Lee, Hsin Yu; Lee, Po-Tsung.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1318-1321 5614304 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.

AB - In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.

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