@inproceedings{f83d77a69cdd4896a0525ec2207ab7b8,
title = "Characteristics of MIS solar cells using sputtering SiO2 insulating layers",
abstract = "In this study, the characteristics of both p-type and ntype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H 22) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.",
author = "Chang, {Tzu Yueh} and Chang, {Chun Lung} and Lee, {Hsin Yu} and Po-Tsung Lee",
year = "2010",
month = dec,
day = "20",
doi = "10.1109/PVSC.2010.5614304",
language = "English",
isbn = "9781424458912",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "1318--1321",
booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",
note = "null ; Conference date: 20-06-2010 Through 25-06-2010",
}