Characteristics of low-k methyl-silsesquiazane (MSZ) for CMP process using oxygen plasma pretreatment

Po-Tsun Liu*, TC Chang, TM Tsai, ST Yan, YC Chang, H Aoki, TY Tseng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, the effect of oxygen (O-2) plasma treatment on methylsilesequiazane (MSZ) dielectric was investigated for CMP process. The low-dielectric-constant (low-kappa) MSZ were prepared by spin-on glass (SOG) process. The resultant wafers were followed by O-2-plasma treatment. After O-2-plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O-2 plasma pre-treatment was increased as much as twice magnitudes than that of the MSZ without O-2-plasma pre-treatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated the modification surfaces resulted from O-2-plasma treatment facilitated CMP MSZ, and after CMP polishing, the MSZ film still maintained low-k quality.

Original languageEnglish
Title of host publicationTHIN FILM MATERIALS, PROCESSES, AND RELIABILITY
EditorsGS Mathad
PublisherELECTROCHEMICAL SOC INC
Pages237-243
Number of pages7
ISBN (Print)1-56677-393-8
StatePublished - Apr 2003
EventInternational Symposium on Thin Film Materials, Processes and Reliability - PARIS, France
Duration: 27 Apr 20032 May 2003

Publication series

NameElectrochemical Society Series
PublisherELECTROCHEMICAL SOC INC
Volume2003
ISSN (Print)0275-0171

Conference

ConferenceInternational Symposium on Thin Film Materials, Processes and Reliability
CountryFrance
CityPARIS
Period27/04/032/05/03

Keywords

  • CHEMICAL-MECHANICAL PLANARIZATION

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