Characteristics of La2O3 gate dielectric film with Al implantation using plasma immersion ion implantation

Banani Sen*, H. Wong, P. K. Chu, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, the effects of aluminum implantation on thin La 2O3 films grown by e-beam evaporation have been investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The small amount of aluminum incorporated (∼ 6% near the surface) in the oxide film greatly modifies both material and electrical properties of the dielectric. Reduction in the leakage current (by four orders of magnitude) and the flatband voltage shift are indications of significant removal of the bulk traps from the oxide. The steep transition from the depletion region to the accumulation region in the CV characteristics as well as the XPS results reveal the stoichiometric improvement of the interfacial layer with a reduction in the interface state density. However, the annealing conditions need to be optimized in order to have maximum reduction in oxide traps and leakage current in the Al-PIII La2O 3 film.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 8 Dec 200810 Dec 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period8/12/0810/12/08

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    Sen, B., Wong, H., Chu, P. K., Kakushima, K., & Iwai, H. (2008). Characteristics of La2O3 gate dielectric film with Al implantation using plasma immersion ion implantation. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760674] (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760674