Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments

Ting Kuo Chang*, Ching Wei Lin, Chang Ho Tseng, Huang-Chung Cheng, Yuan Ching Peng, Wen Tung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasma-enhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

Original languageEnglish
Title of host publicationAdvanced Materials and Devices for Large-Area Electronics
Number of pages6
StatePublished - 1 Dec 2001
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: 16 Apr 200120 Apr 2001

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA

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