Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments

Ting Kuo Chang; Ching Wei Lin; Chang Ho Tseng; Huang-Chung Cheng; Yuan Ching Peng; Wen Tung Wang

doi:10.1557/PROC-685-D5.3.1

Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments

Ting Kuo Chang^*, Ching Wei Lin, Chang Ho Tseng, Huang-Chung Cheng, Yuan Ching Peng, Wen Tung Wang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, high quality silicon dioxide (SiO₂) films were prepared by large-area plasma-enhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O₂, N₂O, and NH₃ were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N₂O, and NH₃ plasma treatments, the electrical strength of oxide was enhanced. Besides, NH₃ plasma treatment exhibited the highest enhancement efficiency. O₂- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Q_bd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH₃-plasma, samples with N₂O plasma treatment showed superior stress endurance. Consequently, N₂O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

Original language	English
Title of host publication	Advanced Materials and Devices for Large-Area Electronics
Pages	106-111
Number of pages	6
DOIs	https://doi.org/10.1557/PROC-685-D5.3.1
State	Published - 1 Dec 2001
Event	2001 MRS Spring Meeting - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	685
ISSN (Print)	0272-9172

Conference

Conference	2001 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	16/04/01 → 20/04/01

Access to Document

10.1557/PROC-685-D5.3.1

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Chang, T. K., Lin, C. W., Tseng, C. H., Cheng, H-C., Peng, Y. C., & Wang, W. T. (2001). Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments. In Advanced Materials and Devices for Large-Area Electronics (pp. 106-111). (Materials Research Society Symposium Proceedings; Vol. 685). https://doi.org/10.1557/PROC-685-D5.3.1

@inproceedings{b7160a90a9e0482bbba70b49608b48bc,

title = "Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments",

abstract = "In this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasma-enhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.",

author = "Chang, {Ting Kuo} and Lin, {Ching Wei} and Tseng, {Chang Ho} and Huang-Chung Cheng and Peng, {Yuan Ching} and Wang, {Wen Tung}",

year = "2001",

month = dec,

day = "1",

doi = "10.1557/PROC-685-D5.3.1",

language = "English",

isbn = "1558996214",

series = "Materials Research Society Symposium Proceedings",

pages = "106--111",

booktitle = "Advanced Materials and Devices for Large-Area Electronics",

note = "null ; Conference date: 16-04-2001 Through 20-04-2001",

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Chang, TK, Lin, CW, Tseng, CH, Cheng, H-C, Peng, YC & Wang, WT 2001, Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments. in Advanced Materials and Devices for Large-Area Electronics. Materials Research Society Symposium Proceedings, vol. 685, pp. 106-111, 2001 MRS Spring Meeting, San Francisco, CA, United States, 16/04/01. https://doi.org/10.1557/PROC-685-D5.3.1

Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments. / Chang, Ting Kuo; Lin, Ching Wei; Tseng, Chang Ho; Cheng, Huang-Chung; Peng, Yuan Ching; Wang, Wen Tung.

Advanced Materials and Devices for Large-Area Electronics. 2001. p. 106-111 (Materials Research Society Symposium Proceedings; Vol. 685).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characteristics of large-area plasma enhanced chemical vapor deposited TEOS oxide with various short-time plasma treatments

AU - Chang, Ting Kuo

AU - Lin, Ching Wei

AU - Tseng, Chang Ho

AU - Cheng, Huang-Chung

AU - Peng, Yuan Ching

AU - Wang, Wen Tung

PY - 2001/12/1

Y1 - 2001/12/1

N2 - In this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasma-enhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

AB - In this work, high quality silicon dioxide (SiO2) films were prepared by large-area plasma-enhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O2, N2O, and NH3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N2O, and NH3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH3 plasma treatment exhibited the highest enhancement efficiency. O2- plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Qbd) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH3-plasma, samples with N2O plasma treatment showed superior stress endurance. Consequently, N2O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.

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