Characteristics of integrated RF transformers on GaAs substrate

Chin-Chun Meng*, Ya Hui Teng, Yi Chen Lin, Jhin Ci Jhong, Ying Chieh Yen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Stacked transformers, coupling stacked transformers, interleave transformers and symmetrical transformers on GaAs substrate are systematically studied in this paper. Two kinds stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (∼0.9) at the cost of lower selfresonance frequency. The interleave transformers have the identical electric properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. On the other hand, the symmetrical transformer is compatible with the differential operation and can have the center-tapped biasing option. The data established here provide a useful design library for the GaAs RFIC.

Original languageEnglish
Title of host publication2007 Asia-Pacific Microwave Conference, APMC
DOIs
StatePublished - 1 Dec 2007
EventAsia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand
Duration: 11 Dec 200714 Dec 2007

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2007
CountryThailand
CityBangkok
Period11/12/0714/12/07

Keywords

  • GaAs
  • Interleave transformer and symmetrical transformer
  • Stack transformer
  • Transformer

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