Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

Hung Pin D. Yang*, I. Chen Hsu, Ya Hsien Chang, Fang I. Lai, Hsin-Chieh Yu, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.

Original languageEnglish
Pages (from-to)1387-1395
Number of pages9
JournalJournal of Lightwave Technology
Volume26
Issue number11
DOIs
StatePublished - 1 Jun 2008

Keywords

  • Photonic-crystal (PhC)
  • Quantum-dot (QD)
  • Submonolayer (SML)
  • Vertical-cavity surface-emitting laser (VCSEL)

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