Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al 2 O 3 gate dielectric

Chien Hung Wu*, Kow-Ming Chang, Sung Hung Huang, I. Chung Deng, Chin Jyi Wu, Wei Han Chiang, Chia Chiang Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al 2 O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm 2 Vċs), and a large I on I off ratio of 1 ×10 8 .

Original languageEnglish
Article number6165637
Pages (from-to)552-554
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - 1 Apr 2012

Keywords

  • Al O
  • atmospheric pressure plasma jet (APPJ)
  • indium-gallium-zinc oxide (IGZO)
  • nonvacuum
  • plasma-enhanced atomic layer deposition (PE-ALD)

Fingerprint Dive into the research topics of 'Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al <sub>2</sub> O <sub>3</sub> gate dielectric'. Together they form a unique fingerprint.

Cite this