Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al 2 O 3 gate dielectric

Chien Hung Wu; Kow-Ming Chang; Sung Hung Huang; I. Chung Deng; Chin Jyi Wu; Wei Han Chiang; Chia Chiang Chang

doi:10.1109/LED.2012.2185774

Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al ₂ O ₃ gate dielectric

Chien Hung Wu^*, Kow-Ming Chang, Sung Hung Huang, I. Chung Deng, Chin Jyi Wu, Wei Han Chiang, Chia Chiang Chang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al ₂ O ₃ as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V _T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm ² Vċs), and a large I _on I _off ratio of 1 ×10 ⁸ .

Original language	English
Article number	6165637
Pages (from-to)	552-554
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2012.2185774
State	Published - 1 Apr 2012

Keywords

Al O
atmospheric pressure plasma jet (APPJ)
indium-gallium-zinc oxide (IGZO)
nonvacuum
plasma-enhanced atomic layer deposition (PE-ALD)

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10.1109/LED.2012.2185774

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title = "Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al 2 O 3 gate dielectric",

abstract = " This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al 2 O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm 2 Vċs), and a large I on I off ratio of 1 ×10 8 .",

keywords = "Al O, atmospheric pressure plasma jet (APPJ), indium-gallium-zinc oxide (IGZO), nonvacuum, plasma-enhanced atomic layer deposition (PE-ALD)",

author = "Wu, {Chien Hung} and Kow-Ming Chang and Huang, {Sung Hung} and Deng, {I. Chung} and Wu, {Chin Jyi} and Chiang, {Wei Han} and Chang, {Chia Chiang}",

year = "2012",

month = apr,

day = "1",

doi = "10.1109/LED.2012.2185774",

language = "English",

volume = "33",

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journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al ₂ O ₃ gate dielectric. / Wu, Chien Hung; Chang, Kow-Ming; Huang, Sung Hung; Deng, I. Chung; Wu, Chin Jyi; Chiang, Wei Han; Chang, Chia Chiang.

In: IEEE Electron Device Letters, Vol. 33, No. 4, 6165637, 01.04.2012, p. 552-554.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of IGZO TFT prepared by atmospheric pressure plasma jet using PE-ALD Al 2 O 3 gate dielectric

AU - Wu, Chien Hung

AU - Chang, Kow-Ming

AU - Huang, Sung Hung

AU - Deng, I. Chung

AU - Wu, Chin Jyi

AU - Chiang, Wei Han

AU - Chang, Chia Chiang

PY - 2012/4/1

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AB - This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al 2 O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm 2 Vċs), and a large I on I off ratio of 1 ×10 8 .

KW - Al O

KW - atmospheric pressure plasma jet (APPJ)

KW - indium-gallium-zinc oxide (IGZO)

KW - nonvacuum

KW - plasma-enhanced atomic layer deposition (PE-ALD)

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