This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al 2 O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm 2 Vċs), and a large I on I off ratio of 1 ×10 8 .
- Al O
- atmospheric pressure plasma jet (APPJ)
- indium-gallium-zinc oxide (IGZO)
- plasma-enhanced atomic layer deposition (PE-ALD)