Gd2O3 high-k gate thin films were deposited by MBE on various oriented Si substrate to investigate the substrate orientation dependence, Electrical characteristics of Gd2O3 on p-type Si(100), (110) and (111) were studied using Metal - Insulator - Semiconductor (MIS) capacitors. The dependences of flat band voltage shift (δV FB) and interface state densities (D11) on substrate orientation were found to be similar to those of SiO2. Capacitance equivalent thickness (CET) and leakage current density depended on the Si substrate orientation probably because the interfacial layer thickness and/or composition were different. The leakage current densities of amorphous Gd 2O3 gate oxide obtained in our experiments were found to be one order of magnitude smaller than those of the reported crystalline Gd 2O3 films.
|Number of pages||11|
|State||Published - 2003|
|Event||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States|
Duration: 20 Oct 2002 → 24 Oct 2002
|Conference||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues|
|City||Salt Lake City, UT|
|Period||20/10/02 → 24/10/02|