Characteristics of high-k Gd2O3 films deposited on different orientation of Si substrate

Ikumi Kashiwagi*, Chizuru Ohshima, Sun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Gd2O3 high-k gate thin films were deposited by MBE on various oriented Si substrate to investigate the substrate orientation dependence, Electrical characteristics of Gd2O3 on p-type Si(100), (110) and (111) were studied using Metal - Insulator - Semiconductor (MIS) capacitors. The dependences of flat band voltage shift (δV FB) and interface state densities (D11) on substrate orientation were found to be similar to those of SiO2. Capacitance equivalent thickness (CET) and leakage current density depended on the Si substrate orientation probably because the interfacial layer thickness and/or composition were different. The leakage current densities of amorphous Gd 2O3 gate oxide obtained in our experiments were found to be one order of magnitude smaller than those of the reported crystalline Gd 2O3 films.

Original languageEnglish
Pages93-103
Number of pages11
StatePublished - 2003
EventPhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
Duration: 20 Oct 200224 Oct 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
CountryUnited States
CitySalt Lake City, UT
Period20/10/0224/10/02

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