Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

Ming Wen Ma*, Tsung Yu Chiang, Woei Cherng Wu, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO 2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO 2 /poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO 2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO 2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

Original languageEnglish
Pages (from-to)3489-3493
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - 10 Dec 2008


  • 3-D integration
  • High-κ
  • Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)
  • Oxygen plasma
  • System-on-panel (SOP)

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