Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

Hung Bin Chen; Chun-Yen Chang; Nan-Heng Lu; Jia-Jiun Wu; Ming Hung Han; Ya-Chi Cheng; Yung Chun Wu

doi:10.1109/LED.2013.2262018

Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

Hung Bin Chen, Chun-Yen Chang, Nan-Heng Lu, Jia-Jiun Wu, Ming Hung Han, Ya-Chi Cheng, Yung Chun Wu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.

Original language	English
Pages (from-to)	897-899
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	7
DOIs	https://doi.org/10.1109/LED.2013.2262018
State	Published - Jun 2013

Keywords

Gate-all-around (GAA); junctionless (JL); thin-film transistor; ultrathin channel
TRANSISTORS

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10.1109/LED.2013.2262018

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title = "Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel",

abstract = "This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.",

keywords = "Gate-all-around (GAA); junctionless (JL); thin-film transistor; ultrathin channel, TRANSISTORS",

author = "Chen, {Hung Bin} and Chun-Yen Chang and Nan-Heng Lu and Jia-Jiun Wu and Han, {Ming Hung} and Ya-Chi Cheng and Wu, {Yung Chun}",

year = "2013",

month = jun,

doi = "10.1109/LED.2013.2262018",

language = "English",

volume = "34",

pages = "897--899",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

AU - Chen, Hung Bin

AU - Chang, Chun-Yen

AU - Lu, Nan-Heng

AU - Wu, Jia-Jiun

AU - Han, Ming Hung

AU - Cheng, Ya-Chi

AU - Wu, Yung Chun

PY - 2013/6

Y1 - 2013/6

N2 - This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.

AB - This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.

KW - Gate-all-around (GAA); junctionless (JL); thin-film transistor; ultrathin channel

KW - TRANSISTORS

U2 - 10.1109/LED.2013.2262018

DO - 10.1109/LED.2013.2262018

M3 - Article

VL - 34

SP - 897

EP - 899

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -