Abstract
This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.
Original language | English |
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Pages (from-to) | 897-899 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 7 |
DOIs | |
State | Published - Jun 2013 |
Keywords
- Gate-all-around (GAA); junctionless (JL); thin-film transistor; ultrathin channel
- TRANSISTORS