Characteristics of GaAs transformers for RFIC applications

Chin-Chun Meng*, Ya Hui Teng, Jin Siang Syu, Yi Chen Lin, Jhin Ci Jhong, Ying Chieh Yen

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this article, stacked transformers, coupling stacked transformers, interleave transformers, and symmetrical transformers on GaAs substrate are systematically studied. Two kinds of stacked transformer are under study. One has the symmetrical electric property while the other one has a better quality factor for the primary port. The stack transformers have achieved the highest coupling coefficient (∼0.9) at the cost of lower self-resonance frequency. The interleave transformers have the identical electrical properties for the primary and the secondary ports. However, the layout is incompatible with the differential operation. On the other hand, the symmetrical transformer is compatible with the differential operation and can have the center-tapped biasing option. The data established here provides a useful design library for the GaAs RFIC.

Original languageEnglish
Pages (from-to)2937-2942
Number of pages6
JournalMicrowave and Optical Technology Letters
Volume50
Issue number11
DOIs
StatePublished - 1 Nov 2008

Keywords

  • GaAs
  • Interleave transformer
  • Stack transformer
  • Symmetrical transformer
  • Transformer

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  • Cite this

    Meng, C-C., Teng, Y. H., Syu, J. S., Lin, Y. C., Jhong, J. C., & Yen, Y. C. (2008). Characteristics of GaAs transformers for RFIC applications. Microwave and Optical Technology Letters, 50(11), 2937-2942. https://doi.org/10.1002/mop.23853