Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Jia Min Shieh*, Shich Chang Suen, Kou Chiang Tsai, Bau Tong Dai, Yew-Chuhg Wu, Yu Hen Wu

*Corresponding author for this work

Research output: Contribution to journalConference article

14 Scopus citations

Abstract

The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.

Original languageEnglish
Pages (from-to)780-787
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
StatePublished - 1 May 2001
Event13th International Vaccum Microelectronics Conference - Guangzhou, China
Duration: 14 Aug 200017 Aug 2000

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