Characteristics of field effect a-Si:H solar cells

H. Fujioka*, M. Oshima, Chen-Ming Hu, M. Sumiya, N. Matsuki, K. Miyazaki, H. Koinuma

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Two dimensional device simulation has revealed advantages of a solar cell which utilizes an inversion layer induced by the field effect instead of a heavily doped window layer. The cell performance improvements have been predicted not only in the short circuit current due to the increased quantum efficiency for light with short wavelengths but also in the open circuit voltage and the fill factor by the use of metals with larger workfunctions. The conversion efficiency has been estimated to increase to 50% by the use of the field effect solar cell.

Original languageEnglish
Pages (from-to)1287-1290
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
DOIs
StatePublished - 1 Jan 1998

Keywords

  • Field effect
  • Solar cell
  • aSi:H

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