Characteristics of emission polarization in a -plane nanorods embedded with InGaN/GaN multiple quantum wells

J. C. Li, Tien-chang Lu, H. M. Huang, W. W. Chan, Hao-Chung Kuo, S. C. Wang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nonpolar (a -plane) GaN nanorod arrays with embedded In x Ga 1-x N/GaN (x=0.09, 0.14, 0.24, and 0.30) multiple quantum wells (MQWs) grown on r -plane sapphire have been fabricated successfully by self-assembled Ni nanomasks and subsequent inductively coupled plasma reactive-ion etching. After nanorod fabrications, the polarization ratio of the emission from MQWs with lower indium composition (x=0.09 and 0.14) slightly decreases but apparently increases by at most 79% for the samples with higher indium composition (x=0.24 and 0.30). Competition between the effect of multiple scattering, strain relaxation and reduction in localized centers, expected in a -plane MQW samples, are attributed to the variations in the polarization ratios after the nanorod formation.

Original languageEnglish
Article number063508
Number of pages5
JournalJournal of Applied Physics
Volume108
Issue number6
DOIs
StatePublished - 15 Sep 2010

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