Fluorinated silicon oxide (FxSiOy) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O2 and CF4 as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF4 flow rate were investigated and discussed.
|Number of pages||4|
|State||Published - 1 Dec 1997|
|Event||7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore|
Duration: 10 Sep 1997 → 12 Sep 1997
|Conference||7th International Symposium on IC Technology, Systems and Applications ISIC 97|
|Period||10/09/97 → 12/09/97|