Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (FxSiOy) by using indirect fluorinating precursor CF4

Kow-Ming Chang; Shih Wei Wang; Chin Jen Wu; Ta Hsun Yeh; Chii Horng Li; Ji Yi Yang

Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (F_xSiO_y) by using indirect fluorinating precursor CF₄

Kow-Ming Chang^*, Shih Wei Wang, Chin Jen Wu, Ta Hsun Yeh, Chii Horng Li, Ji Yi Yang

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to conference › Paper › peer-review

Abstract

Fluorinated silicon oxide (F_xSiO_y) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O₂ and CF₄ as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF₄ flow rate were investigated and discussed.

Original language	English
Pages	584-587
Number of pages	4
State	Published - 1 Dec 1997
Event	7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore Duration: 10 Sep 1997 → 12 Sep 1997

Conference

Conference	7th International Symposium on IC Technology, Systems and Applications ISIC 97
Country	Singapore
City	Singapore
Period	10/09/97 → 12/09/97

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@conference{821aab27a6df45fdb62feef14e201877,

title = "Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (FxSiOy) by using indirect fluorinating precursor CF4",

abstract = "Fluorinated silicon oxide (FxSiOy) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O2 and CF4 as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF4 flow rate were investigated and discussed.",

author = "Kow-Ming Chang and Wang, {Shih Wei} and Wu, {Chin Jen} and Yeh, {Ta Hsun} and Li, {Chii Horng} and Yang, {Ji Yi}",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "584--587",

note = "null ; Conference date: 10-09-1997 Through 12-09-1997",

}

Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (F_xSiO_y) by using indirect fluorinating precursor CF₄. / Chang, Kow-Ming; Wang, Shih Wei; Wu, Chin Jen; Yeh, Ta Hsun; Li, Chii Horng; Yang, Ji Yi.

1997. 584-587 Paper presented at 7th International Symposium on IC Technology, Systems and Applications ISIC 97, Singapore, Singapore.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (FxSiOy) by using indirect fluorinating precursor CF4

AU - Chang, Kow-Ming

AU - Wang, Shih Wei

AU - Wu, Chin Jen

AU - Yeh, Ta Hsun

AU - Li, Chii Horng

AU - Yang, Ji Yi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Fluorinated silicon oxide (FxSiOy) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O2 and CF4 as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF4 flow rate were investigated and discussed.

AB - Fluorinated silicon oxide (FxSiOy) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O2 and CF4 as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF4 flow rate were investigated and discussed.

UR - http://www.scopus.com/inward/record.url?scp=1842679066&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842679066

SP - 584

EP - 587

Y2 - 10 September 1997 through 12 September 1997

ER -