Characteristics of ECR-CVD low dielectric constant fluorinated silicon oxide (FxSiOy) by using indirect fluorinating precursor CF4

Kow-Ming Chang*, Shih Wei Wang, Chin Jen Wu, Ta Hsun Yeh, Chii Horng Li, Ji Yi Yang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Fluorinated silicon oxide (FxSiOy) films for inter metal dielectric applications were deposited in the electron cyclotron resonance chemical vapor deposition system with SiH4, O2 and CF4 as the reaction gases. The variations of film's composition, deposition rate and characteristics (such as dielectric constant, and leakage performance, etc.) with the CF4 flow rate were investigated and discussed.

Original languageEnglish
Pages584-587
Number of pages4
StatePublished - 1 Dec 1997
Event7th International Symposium on IC Technology, Systems and Applications ISIC 97 - Singapore, Singapore
Duration: 10 Sep 199712 Sep 1997

Conference

Conference7th International Symposium on IC Technology, Systems and Applications ISIC 97
CountrySingapore
CitySingapore
Period10/09/9712/09/97

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