Characteristics of cerium oxide for metal-insulator-metal capacitors

C. H. Cheng, H. H. Hsu, W. B. Chen, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number1
DOIs
StatePublished - 26 Nov 2009

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