The growth behavior of Ba(Mg1/3Ta2/3)O3 (BMT) thin films on bare or Pt-coated silicon substrates and their buffering effect on the subsequently deposited Pb(Zr,Ti)O3 (PZT) films were systematically examined. The preferred orientation of BMT layer varies pronouncedly with the deposition parameters. It is (200) textured when deposited under high substrate temperature (400°C) or large laser fluence (3 J/cm2). The BMT layer not only suppresses the film-to-substrate interdiffusion but also enhances the Pb(Zr1-xTix)O 3 (PZT) nucleation kinetics. The PZT films prepared on BMT layer by metal-organic-decomposition (MOD) process begin to crystallize at a substrate temperature as low as 400°C, which is lower than the reported heat treatment temperature for preparing PZT films via MOD process. However, postannealing at 550°C is required to fully crystallize the PZT films. The PZT/BMT/Pt(Si) thin films show high dielectric constant [(εr)PZT=400-425], low leakage current density (Je<2 × 10-7 A/cm 2), and good ferroelectric properties (Pr = 15 μC/cm2, Ec=157 kV/cm), while the PZT/BMT/Si thin films exhibit a large optical refractive index (nPZT/BMT/si=2.4).