Characteristics of an electrically pumped GaN-based microcavity light emitter with an AlN current blocking layer

Bo Siao Cheng, Tzeng Tsong Wu, Ying You Lai, Yun Lin Wu, Cheng-Huan Chen, Tien-chang Lu*, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
DOIs
StatePublished - 1 Dec 2012
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2012

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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