Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices

Kuo Chang Chiang, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Nanocomposite thin films containing AgInSbTe (AIST) particles embedded in an SiO2 matrix was prepared by sputtering deposition and its feasibility for nonvolatile floating gate memory (NFGM) was investigated. The sample subjected to a 400 °ealing exhibited a distinct ysteresis memory window (VFB) shift = 6.6 V and charge density = 5. ×10 12 cm-2 after ± voltage sweep. Electrical measurement revealed the current transport is via the Schottky emission in low applied field and the space-charge-limited conduction mechanism in high applied field in the samples, regardless of their thermal history. Transmission electron microscopy and x-ray photoelectron spectroscopy indicated that the metallic Sb2Te nanocrystals (NCs) with diameters about 5-7 nm dispersed in a nanocomposite layer may serve as the discrete charge-storage traps for nonvolatile memory. Analytical results illustrate the utilization of an AIST-SiO2 nanocomposite layer as the core structure of NFGM devices is able to simplify the device structure and fabrication process.

Original languageEnglish
Article number425204
JournalNanotechnology
Volume21
Issue number42
DOIs
StatePublished - 22 Oct 2010

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