Characteristics of a-plane green light-emitting diode grown on r-plane sapphire

Shih Chun Ling*, Te Chung Wang, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Bao Yao Chang, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang, Jenq Dar Tsay

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Ω as 20-mA injected current. Furthermore, the output power was 240 μW at 100-mA drive current.

Original languageEnglish
Article number5175501
Pages (from-to)1130-1132
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number16
DOIs
StatePublished - 15 Aug 2009

Keywords

  • A-plane GaN
  • Electroluminescence (EL)
  • Green light-emitting diodes (LEDs)
  • Polarization degree

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