Characteristics of a photonic bandgap single defect microcavity electroluminescent device

W. D. Zhou*, J. Sabarinathan, P. Bhattarcharya, B. Kochman, E. W. Berg, Peichen Yu, S. W. Pang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

Original languageEnglish
Pages (from-to)1153-1160
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume37
Issue number9
DOIs
StatePublished - 1 Sep 2001

Keywords

  • Defect mode
  • Microcavity
  • Photonic bandgap
  • Surface emitting

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    Zhou, W. D., Sabarinathan, J., Bhattarcharya, P., Kochman, B., Berg, E. W., Yu, P., & Pang, S. W. (2001). Characteristics of a photonic bandgap single defect microcavity electroluminescent device. IEEE Journal of Quantum Electronics, 37(9), 1153-1160. https://doi.org/10.1109/3.945320