Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

Hung Pin D. Yang, Zao En Yeh, Fang I. Lai, Hao-Chung Kuo, Rong Xuan, Jim Y. Chi

Research output: Contribution to journalArticle

Abstract

GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.

Original languageEnglish
Pages (from-to)327-332
Number of pages6
JournalInternational Journal of Electrical Engineering
Volume16
Issue number4
StatePublished - 1 Aug 2009

Keywords

  • Asymmetric
  • Light-emitting diode (LED)
  • Photonic-crystal (PhC)

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