Abstract
GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.
| Original language | English |
|---|---|
| Pages (from-to) | 327-332 |
| Number of pages | 6 |
| Journal | International Journal of Electrical Engineering |
| Volume | 16 |
| Issue number | 4 |
| State | Published - 1 Aug 2009 |
Keywords
- Asymmetric
- Light-emitting diode (LED)
- Photonic-crystal (PhC)
Fingerprint Dive into the research topics of 'Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure'. Together they form a unique fingerprint.
Cite this
Yang, H. P. D., Yeh, Z. E., Lai, F. I., Kuo, H-C., Xuan, R., & Chi, J. Y. (2009). Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure. International Journal of Electrical Engineering, 16(4), 327-332.