Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

Hung Pin D. Yang; Zao En Yeh; Fang I. Lai; Hao-Chung Kuo; Rong Xuan; Jim Y. Chi

Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

Hung Pin D. Yang, Zao En Yeh, Fang I. Lai, Hao-Chung Kuo, Rong Xuan, Jim Y. Chi

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs/Al_o.3Ga_o.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.

Original language	English
Pages (from-to)	327-332
Number of pages	6
Journal	International Journal of Electrical Engineering
Volume	16
Issue number	4
State	Published - 1 Aug 2009

Keywords

Asymmetric
Light-emitting diode (LED)
Photonic-crystal (PhC)

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title = "Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure",

abstract = "GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.",

keywords = "Asymmetric, Light-emitting diode (LED), Photonic-crystal (PhC)",

author = "Yang, {Hung Pin D.} and Yeh, {Zao En} and Lai, {Fang I.} and Hao-Chung Kuo and Rong Xuan and Chi, {Jim Y.}",

year = "2009",

month = aug,

day = "1",

language = "English",

volume = "16",

pages = "327--332",

journal = "International Journal of Electrical Engineering",

issn = "1812-3031",

publisher = "Chinese Institute of Electrical Engineering",

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TY - JOUR

T1 - Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

AU - Yang, Hung Pin D.

AU - Yeh, Zao En

AU - Lai, Fang I.

AU - Kuo, Hao-Chung

AU - Xuan, Rong

AU - Chi, Jim Y.

PY - 2009/8/1

Y1 - 2009/8/1

N2 - GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.

AB - GaAs/Alo.3Gao.7As quantum-well LEDs with an asymmetric photonic-crystal structure in the 850 nm range is reported. The device consists of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a photonic-crystal structure formed within the p-type ohmic contact ring for light extraction. The collimated light output was obtained using an asymmetric photonic-crystal structure for light extraction. The spontaneous emission can be transmitted out of photonic-crystal air-holes.

KW - Asymmetric

KW - Light-emitting diode (LED)

KW - Photonic-crystal (PhC)

UR - http://www.scopus.com/inward/record.url?scp=70349627470&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:70349627470

VL - 16

SP - 327

EP - 332

JO - International Journal of Electrical Engineering

JF - International Journal of Electrical Engineering

SN - 1812-3031

IS - 4

ER -

Characteristics of 850 nm gaas/algaas qw leds with asymmetric photonic-crystal structure

Abstract

Keywords

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