Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian-Li Wu*, Chih Fang Huang, Chun Hu Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages173-183
Number of pages11
Edition6
DOIs
StatePublished - 1 Aug 2011
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number6
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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