Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

Li Feng Teng*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.

Original languageEnglish
Pages2207-2209
Number of pages3
StatePublished - 1 Dec 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period1/12/103/12/10

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