Abstract
In this study, significant improvements in the characteristics of the InAs quantum-dot surface-emitting distributed feedback lasers using indium tin oxide as a cladding material covered by two types of newly designed metal contacts were achieved. Laser characteristics at room temperature including I-V curves, L-I curves, near-field patterns, and lasing spectra are analyzed and discussed. We adopted a metal grating and a metal strip as p-type electrodes to improve the current distribution of the devices. Uniform laser emission in the near-field was observed. Moreover, substantial reductions in the ohmic resistance of 9.35 Ω and a low-threshold current density of 0.28 kA/cm 2 were both achieved under continuous-wave operation, leading to the prospect of high-performance surface emitting distributed feedback.
Original language | English |
---|---|
Article number | 7972943 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 23 |
Issue number | 6 |
DOIs | |
State | Published - 1 Nov 2017 |
Keywords
- distributed feedback laser
- InAs quantum dot
- indium tin oxide
- metal contact layer
- surface emitting laser